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本文叙述硅器件制造过程中,硅晶体中二次缺陷形成、生长和缩小的条件。实验指出:(1)用细致的化学腐蚀方法可有效地减少表面型氧化层错。(2)采用N_2气体中退火或掺氯氧化能缩小和消除热氧化层错。(3)采用氧化前吸收、氧化前高温退火或合适的杂质扩散等方法可以防止热氧化层错的产生。本文也可简单地讨论二次缺陷的生长和缩小的机理问题.
This article describes the silicon device manufacturing process, the formation of secondary defects in silicon crystals, growth and shrinkage conditions. Experiments show that: (1) The use of meticulous chemical etching method can effectively reduce the surface oxide layer fault. (2) N_2 gas annealing or chlorine oxidation can reduce and eliminate thermal oxide layer fault. (3) The use of pre-oxidation absorption, high temperature annealing before oxidation or appropriate impurity diffusion and other methods can prevent the thermal oxide layer of the wrong generation. This article also briefly discusses the mechanism of secondary defect growth and shrinkage.