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MOS 材料和工艺的改进使 MOS 器件和双极器件之间速度的差距大大缩小。例如,多晶硅栅已把 MOS 的速度提高2～3倍。现在,采用耐熔的金属钼作栅更进一步地缩小了此差距。此技术称为 R/MOS(即耐熔金属栅 MOS),已用于生产。制成的器件,共速度此硅栅电路有更大提高。虽然,此工艺是生产高速器件的工艺之一,典型工作频率高于5兆赫的双相100位 R/MOS 动态移位寄存器,却是 MOS 电路正常生产中最快的一种,另外还有其它一些重要特
Improvements in MOS materials and processes have greatly reduced the speed gap between MOS devices and bipolar devices. For example, polysilicon gate MOS has increased the speed of 2 to 3 times. Now, the use of refractory metal molybdenum as a gate further narrows this gap. This technology is called R / MOS (ie, refractory metal gate MOS), has been used for production. Made of devices, a total speed of this silicon gate circuit has been greatly improved. Although this process is one of the processes used to produce high-speed devices, dual-phase 100-bit R / MOS dynamic shift registers with typical operating frequencies above 5 MHz are the fastest of MOS circuits normally in production, along with others Some important special