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采用溶胶－凝胶方法在Pt／Ti／SiO2／Si衬底上制备了光滑均匀的PZT（50／50）铁电薄膜。用XRD、FT－IR反射光谱、Raman光谱以及原子力显微镜（AFM）研究了薄膜随热处理温度的结构变化过程以及薄膜中有机物的挥发。Raman光谱给出了薄膜中三方和四方相共存及转变的结构变化信息。AFM揭示了PZT薄膜中钙铁矿相的形成是从焦绿石结构中转变而来的，其生长机制可用Rosettes生长模型来解释。薄膜中相交约120°交角的3条延伸的界面线则是为了释放薄膜中的应力而产生的。
A smooth and uniform PZT (50/50) ferroelectric thin film was prepared on Pt / Ti / SiO2 / Si substrate by sol-gel method. XRD, FT-IR, Raman spectroscopy and atomic force microscopy (AFM) were used to investigate the structural change of the films with heat treatment and the volatilization of organic compounds in the films. Raman spectroscopy gives information on the structural changes in the coexistence and transformation of the tripartite and tetragonal phases in the film. AFM revealed that the formation of the perovskite phase in the PZT film was transformed from the pyrochlore structure and the growth mechanism can be explained by the Rosette growth model. The three extended interfacial lines in the film that intersect at an angle of about 120 ° are created to release the stress in the film.