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采用脉冲激光沉积方法 (PL D)制备了 Au/ PZT/ BIT/ p- Si多层结构铁电存储二极管 .对铁电存储二极管的P- E电滞回线、I- V特性曲线分别进行了测试与分析 ,并对其导电行为及基于 I- V特性回滞现象的存储机理进行了讨论 .实验表明 ,所制备的多层铁电薄膜具有较高的剩余极化 (2 7μC/ cm2 )和较低的矫顽场 (4 8k V/ cm ) ,BIT铁电层有助于缓解 PZT与 Si衬底之间的界面反应和互扩散 ,减少界面态 ,与 Au/ PZT/ p- Si结构相比 ,漏电流密度降低近两个数量级 ,I- V特性曲线回滞窗口明显增大
The PZT / BIT / p-Si multilayer ferroelectric memory diodes were fabricated by pulsed laser deposition (PL D). The P-E hysteresis loops and I-V characteristic curves of ferroelectric memory diodes were respectively The results show that the prepared multilayer ferroelectric thin films have higher remanent polarization (27μC / cm2) and The lower coercive field (4 8k V / cm) and the BIT ferroelectric layer help to alleviate the interfacial reaction and interdiffusion between PZT and Si substrate, and reduce the interfacial states. Compared with Au / PZT / p-Si structure phase Than the leakage current density decreased by nearly two orders of magnitude, I-V characteristic hysteresis window significantly increased