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对比电子辐照和氦、硼离子注入,研究了质子注入n型和P型直拉硅中产生的缺陷及其退火行为.指出我们所观察到的n型样品中的电子陷阱E(0.30)是质子注入所特有的,它很可能是与氢有关的深能级.与电子辐照对比,离子注入在E(0.41)附近引入了除双空位及磷空位以外的新的缺陷.质子注入引入的氢能使n型样品中各电于陷阱的退火温度有不同程度的降低;在P型样品中,当质子注入剂量为5 × 10~(10)/cm~2与1.5 × 10~(11)/cm~2时,各空穴陷阱的退火温度降低并会聚在150℃,但当质子注入剂量大于或等于5 × 10~(11)/cm~2时,注入的氢对各空穴陷阱的退火没有明显的影响.对以上现象作了分析与讨论.
In comparison with electron irradiation and helium and boron ion implantation, the defects and their annealing behavior in proton implanted n-type and p-type CZS were investigated. It is pointed out that the electron trap E (0.30) in the observed n-type sample is It is most likely hydrogen-related deep protons that are characteristic of proton implants.In contrast to electron irradiation, ion implantation introduces new defects besides double vacancies and phosphorus vacancies near E (0.41) Hydrogen can decrease the annealing temperature of each electron trap in n-type samples to some extent. When the proton injection dose is 5 × 10 10 / cm 2 and 1.5 × 10 11 in the P-type sample, / cm ~ 2, the annealing temperature of each hole trap decreases and converges at 150 ℃, but when the proton implantation dose is greater than or equal to 5 × 10 ~ (11) / cm ~ 2, Annealing has no obvious effect on the above phenomenon was analyzed and discussed.