据1992年第2期《Defense Electronics》报道,IBM的科学家们将硅横向双极晶体管的频率提高了3倍,制出了最高使用频率为20 GHz的器件。他们宣称,速度的改进是由于晶体管的横向设计,如此可减小其电容和电阻。由于器件是低功率使用,因此,在制造时可选用绝缘层上的硅为材料,这比用纯硅作衬底提高了器件运用速度。由于横向晶体管产生的热量较小,芯片设计 According to Defense Electronics, No. 2, 1992, IBM scientists tripled the frequency of silicon lateral bipolar transistors to produce devices with a maximum frequency of 20 GHz. They claim that the speed improvement is due to the lateral design of the transistor, which reduces its capacitance and resistance. As the device is low-power use, therefore, the choice of silicon in the insulation layer for the manufacture of materials, which is more than using pure silicon substrate to improve the device speed. Due to the small amount of heat generated by the lateral transistors, the chip design