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稀土元素Yb在1050℃扩散30分钟,已被引进硅中.它在P型硅中形成两个空穴陷阱Ev+0.38eV和 Ev+0.49cV,在N型硅中形成一个电子陷阱 Ec-0.33eV.它们的电激活浓度都在10~(13)cm~(-3)量级.
The rare earth element Yb diffused for 30 minutes at 1050 ° C and had been introduced into Si.It formed two hole traps Ev + 0.38eV and Ev + 0.49cV in P-type silicon and an electron trap Ec-0.33 in N-type silicon eV. Their electrical activation concentrations are in the order of 10 ~ (13) cm ~ (-3).