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以提高光刻机应用性能为目的,提出了一种高性能硅片曝光场分布优化算法。由芯片尺寸计算得到最佳曝光场尺寸,使其最接近于光刻机提供的曝光场最大尺寸,提高了曝光系统的利用率;引入曝光场交错分布,减少了硅片边缘曝光场的交叠,提高了光刻产率;建立产率优先和良率优先两种优化方案,实现了产率和良率的共优。以实际芯片产品的参量为例,将本算法用于曝光过程,采用产率优先标准,曝光场数量减少了10%,而内场数量基本不变,提高了光刻的产率也确保了良率;采用良率优先标准,内场数量增长了10%,总的场数也有所减少,提高了光刻良率的可靠性也确保了产率。
In order to improve the performance of the lithography machine for the purpose, a high performance silicon film distribution optimization algorithm. The optimal size of the exposure field is calculated by the chip size to be the closest to the maximum size of the exposure field provided by the lithography machine to improve the utilization of the exposure system. The introduction of the staggered distribution of the exposure field reduces the overlap of the exposure fields at the edge of the wafer , To improve the lithography yield; to establish yield optimization and yield priority two optimization programs to achieve a total yield and yield of the total excellent. Taking the parameters of the actual chip product as an example, this algorithm is applied to the exposure process, the yield priority standard is adopted, the number of the exposure field is reduced by 10%, while the number of the internal fields is basically unchanged, the yield of the lithography is improved, the good Rate; the use of yield-priority criteria, the number of infield increased by 10%, the total number of fields has also been reduced, improving the reliability of lithography yield also ensures the yield.