论文部分内容阅读
用近平衡降温生长的LPE技术生长了In_(1-x)Ga_xAs/InP(111)B异质结,研究了在饱和溶液附近,“Ga”组分的偏离对“X”值,带隙(Eg)、荧光峰值波长(λg)、晶格失配[△a/a=(a_(InGaA)·-a_(Inp))/a_(Inp)]的影响:观察了异质结的晶格失配对界面形貌及表面形貌的影响;并分析了在较宽的负晶格匹配范围内有较好的界面和表面形貌的原因。
The In_ (1-x) Ga_xAs / InP (111) B heterojunction was grown by near-equilibrium cooling growth LPE technique. The results show that the deviation of “Ga” (Λg), lattice mismatch [Δa / a = (a_ (InGaA) -a_ (Inp)) / a_ (Inp)]: The lattice loss of the heterojunction was observed Paired interface topography and surface topography; and analyzed the reasons for the better interface and surface topography in the wide negative lattice matching range.