DIBL相关论文
本论文主要研究Hf-Ti-O薄膜作为栅介质材料的MOS和ETSOI MOSFET器件性能.通过MOS器件性能研究,得到以Hf-Ti-O薄膜作为栅介质材料具......
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N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the......
Two kinds of coer effects existing in double-gate (DG) and gate-all-around (GAA) MOSFETs have been investigated by three......
,Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thi
In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HE......
CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully ......
本论文详细研究了抬高源漏(ElevatedSourceandDrain，简称ESD)超薄体(UltraThinBody,简称UTB)SOIMOSFET和凹陷源漏(RecessedSourcean......
A novel nanoscale MOSFET with a source/drain-to-gate non-overlapped and high-k spacer structure has been demonstrated to......
Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical hi
Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in t......
Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applicat
An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer ......
The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of singl......
Different channel lengths and layouts on 0.18μm NMOS transistors are designed for investigating the dependence of short......
利用Sentaurus TCAD软件模拟研究了Halo注入工艺参数（注入角度、剂量、能量）对50nm NMOS器件性能的影响。结果表明,Halo注入角度和剂......
针对Si/SiGe pMOSFET器件结构求解泊松方程,同时考虑器件尺寸减小所致的物理效应,如漏致势垒降低（DIBL）效应、短沟道效应（SCE）和速度过......
基于MOS器件的短沟道效应和漏致势垒降低效应理论，通过求解泊松方程，建立了表面Ge沟道pMOSFET的阚值电压模型．基于该模型对表面Ge沟道......
Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gat
This paper investigates the threshold voltage sensitivity to metal gate work-function for n-channel double gate fin fiel......
Investigation and Comparison of the DIBL Parameter and Thermal Effects of SOD Transistors and SOI Tr
In this paper, thermal effects and Drain Induced barrier lowering (DIBL) of silicon-on-insulator (SOI) and silicon-on-di......
CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully ......
随着器件尺寸的不断缩小,器件的小尺寸效应越来越严重,传统的平面结构MOSFET已经达到其物理极限。为了克服短沟道效应,出现了很多......
