co-implantation相关论文
An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current level......
将不同能量和注量的N+和O+离子依次注入于<100>硅片并高温退火,形成具有SiO2/SiOxNy/Si3N4埋层的SOI结构.本文使用在TRIM的基础上......
采用改进了的MEVVA源阴极对H13钢进行了C+Mo共注入,并做了X射线衍射分析、电化学测量和表面形貌分析.实验结果表明,C+Mo共注入后H1......
