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为了阐明静电感应晶体管静态特性与有源区杂质浓度的关系,提出了十字线形结构模型,所谓十字线形模型是把静电感应晶体管中最本质的东西,即源到漏的电流通路和由栅极引起的势垒之间呈十字线形结构。使用该模型,可以分别求出电流-电压特性,其计算结果可以对实验数值进行定性的说明,并求出了晶体管三个参数与杂质浓度的关系。用此模型得到的结果是:漏极微分电阻与外延层厚度的平方成正比,实验结果是与1.5次方成正比。另外,明确了由自建电位使沟道正好处于夹断状态时,跨导与杂质浓度的平方根成正比,这一点在实验上也得到了证明。
In order to clarify the relationship between the static characteristics of the electrostatic induction transistor and the impurity concentration in the active region, a cross-shaped structure model is proposed. The cross-shaped model is the essence of the electrostatic induction transistor, that is, the source-to-drain current path and the potential induced by the gate Between the barrier was a cross-shaped structure. Using this model, the current-voltage characteristics can be obtained respectively. The calculation results can be used to qualitatively describe the experimental values and the relationship between the three parameters of the transistor and the impurity concentration has been obtained. The result obtained with this model is that the drain differential resistance is proportional to the square of the epitaxial layer thickness and the experimental result is proportional to the 1.5th power. In addition, the self-built potential to make the channel just in the pinch-off state, the transconductance and the square root of the impurity concentration is proportional to this point in the experiment has also been proved.