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MIS器件是研究窄禁带半导体材料碲镉汞(Hg_(1-x)Cd_xTe)体内及其界面特性的有效工具。我们主要对一种由双层介质组成的Hg_(1-x)Cd_xTe MIS器件的电学特性进行了研究。对Hg_(1-x)Cd_xTe材料表面作适当的物理化学处理之后,利用阳极氧化的方法,在Hg_(1-x)Cd_xTe衬底上生长一层阳极氧化层(厚约600～1200(?)),再利用蒸发或溅射方法在阳极氧化层上淀积一层介质ZnS(厚约1000～2000(?)),组成双层介质结构。而金属栅电极则通过蒸发金属
MIS device is an effective tool to study the in-vivo and interfacial properties of Hg (1-x) CdxTe with narrow bandgap semiconductor materials. We mainly study the electrical properties of a Hg_ (1-x) Cd_xTe MIS device composed of two layers of dielectric. After an appropriate physical and chemical treatment on the surface of Hg_ (1-x) Cd_xTe material, an anodic oxide layer was grown on the Hg_ (1-x) Cd_xTe substrate by using anodic oxidation method ), And then depositing a layer of dielectric ZnS (about 1000-2000 (?)) On the anodized layer by evaporation or sputtering to form a double-layer dielectric structure. The metal gate electrode is through the evaporation of metal