由前三章的讨论可知,随着集成电路技术向超大规模集成的方向发展,MOS器件的尺寸日益缩小,它的性能不再能用一个简单的一维分析公式来表示。二维的和三维的效应和各种非线性效应的作用逐渐占主要地位。为了要精确地确定小尺寸MOS器件的性能,当然可以采用实验的办法,具体制备该种器件然后加以测试来确定; From the discussion of the first three chapters, we can see that with the development of integrated circuit technology to very large scale integration, the size of MOS devices is shrinking. Its performance can no longer be expressed by a simple one-dimensional analytical formula. The role of two-dimensional and three-dimensional effects and various non-linear effects gradually dominated. In order to accurately determine the performance of small-scale MOS devices, of course, experimental methods can be used, and the specific devices are prepared and then tested to determine;