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将高剂量 ( 1× 1 0 17/cm2 ) Si+ 注入热氧化 Si O2 薄膜 ,在～ 5.0 e V( 2 65nm)激光的激发下 ,观测到 2 .97e V、2 .32 e V和 1 .73e V的三个光致发光 ( PL)峰 ,经快速热退火 ( RTA)处理后 ,其PL谱峰形发生变化 .本文对 PL峰的产生与变化机制进行了初步探讨
High-dose (1 × 10 17 / cm 2) Si + films were implanted into the thermally-oxidized Si O 2 thin films. Under the excitation of ~5.0 eV (2 65 nm) laser, 2.97 eV, 2.32 e V and 1.73 e (PL) peaks of PL were changed by PLT, and the PL peak shape changed after the rapid thermal annealing (RTA) treatment.This paper discussed the mechanism of PL peak generation and variation