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对WC55中功率微波砷化镓场效应晶体管进行的高温固定偏置加速寿命试验研究表明:该器件在70℃环境温度下的MTTF达7.3×10~5小时以上,已接近国外类似器件的可靠性水平;同时还揭示出器件早期失效模式有栅源烧毁、饱和漏电流下降及栅-源击穿电压降低等三种.根据加速寿命试验结果,提出了器件通过室温250小时LTPD为20%的工作寿命试验和500小时LTPD为15%的工作寿命试验的两种最佳筛选条件.室温工作寿命试验结果证明所提出的筛选条件是合理的.
The high temperature fixed bias accelerated life test of WC55 medium power microwave gallium arsenide field effect transistor shows that the device has an MTTF of 7.3 × 10 ~ 5 hours at 70 ℃ ambient temperature and is close to the reliability of similar devices abroad Level at the same time also reveal three kinds of early failure mode of the device: gate burnout, decrease of saturation leakage current and reduction of gate-source breakdown voltage.According to the results of accelerated life test, the device is proposed to work at 20% of LTPD for 250 hours at room temperature Lifetime test and LTPD at 500 hours are the two best screening conditions for the working life test of 15% .The results of room temperature working life test prove that the proposed screening conditions are reasonable.