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文中描述了Si/SiO_2界面固定电荷对界面态的影响。考查了低温氢退火对Si/SiO_2界面特性的改善效果。同时还给出了界面电子能谱(AES和ESCA)时分析结果。
In this paper, the influence of the fixed charges on the interface state of Si / SiO_2 interface is described. The effect of low-temperature hydrogen annealing on the Si / SiO 2 interface properties was investigated. The analytical results of interface electron spectroscopy (AES and ESCA) are also given.