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采用Ｉ－Ｖ亚阈测量技术，分析了封闭栅和条形栅结构ＣＭＯＳ／ＳＯＳ器件的ｌｏｇＩ－Ｖ曲线亚阈斜率和阈电压的总剂量电离辐照特性，以及不同的辐照偏置条件对上述两个电参数的影响。结果表明，在总剂量辐照下，封闭棚和条形栅ＣＭＯＳ／ＳＯＳ器件的阈电压及ｌｏｇＩ－Ｖ曲线亚阈斜率的变化趋势基本相同。
The I-V subthreshold measurement technique was used to analyze the total dose ionizing radiation characteristics of the sub-threshold slopes and threshold voltages of the logI-V curve in the closed-gate and the bar-gate CMOS / SOS devices and the different irradiation bias conditions The impact of these two electrical parameters. The results show that the threshold voltages and the subthreshold slopes of the log I-V curves of the CMOS / SOS devices are basically the same under the total dose irradiation.