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通过采用能带工程技术来再设计基本的硅沟道技术,一种新型的硅上硅(silicon-on-silicon)工艺能够大幅降低标准CMOS工艺中的栅泄漏,而不用引入可能带来混乱的新材料,也不需要对标准的CMOS制造流程做出太大的改动。
By reengineering basic silicon channel technology with energy-band engineering, a new type of silicon-on-silicon process can dramatically reduce gate leakage in standard CMOS processes without introducing potentially confusing New material, do not need to make the standard CMOS manufacturing process too much change.