对离子束增强反应磁控溅射低温沉积 AIN 膜层组织形貌、晶体结构、电子结构及其光学特性进行了研究。结果表明膜层组织均匀,晶粒细小,薄膜 AIN 是呈(002)择优取向的密排六方结构。由于Al-N 键的形成,使 Al 的2p 轨道电子结合能发生2.6eV 的化学位移。薄膜在可见光区域有很高的透射率,在紫外区域300nm 处有很强的吸收峰,在红外600—800cm~(-1)处有个吸收带,通过计算得到了 AIN膜的折射率,禁带宽度和晶格振动力学常数。 The morphology, crystal structure, electronic structure and optical properties of AIN film deposited by ion beam enhanced reactive magnetron sputtering were studied. The results show that the film structure is uniform and the grains are fine. The film AIN is a hexagonal close-packed hexagonal structure with a preferred orientation of (002). Due to the formation of Al-N bonds, a chemical shift of 2.6 eV occurs in the 2p orbital electron bonding of Al. The film has a high transmittance in the visible region, a strong absorption peak at 300 nm in the ultraviolet region, and an absorption band at 600-800 cm -1 in the infrared. The refractive index of the AIN film is obtained by calculation. Bandwidth and lattice vibrational mechanical constants.