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东芝研制成功了频率为30GHz、噪声系数为4dB、最大可能增益 MAG 为8dB 的低噪声GaAs FET。它用电子束曝光实现了0.25μm 的栅长。如果栅长由过去的0.5μm 减少一半的话,栅布线电阻就要增加。为解决这个问题,把栅电极金属铝加厚到0.8μm,同时设置两个栅供电点,这样得到的布线电阻与0.5μm 栅的情况相等。此外,为了降低源电阻,采用凹槽结
Toshiba has successfully developed a low-noise GaAs FET with a frequency of 30GHz, a noise figure of 4dB, and a maximum possible gain MAG of 8dB. It achieves a gate length of 0.25 μm with electron beam exposure. If the gate length is reduced by half from the previous 0.5μm, the gate wiring resistance will increase. To solve this problem, the gate electrode metal aluminum is thickened to 0.8 m, and two gate supply points are provided at the same time, so that the resulting wiring resistance is equal to that of the 0.5 m gate. In addition, to reduce the source resistance, the use of groove junction