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我们应用反应溅射法制备了掺硼的a-Si:H薄膜和a-SiB:H合金薄膜。掺硼浓度(Y_g=[B_2H_6]/([Ar]十[H_2]))由10~(-6)到10~(-2)变化。研究发现,ESR信号为g_1=2.0051和g_2=2.0096两部分的叠加,前者代表Si的悬挂键Si_3~0信号,后者是由于掺B而引起的自旋信号。随着Y_g的增大,g_2由2.0090变化到2.0096,其峰一峰宽度△H_(2??)由20.5G展宽到26.0G;而g_1值和其△H_(1??)没有明显的变化。Y_g增大,两种缺陷态密度都有所增大,但g_1信号代表的B致缺陷态密度增加较快。在重掺B(Y_g≥10~(-2))的情况下,材料的性质与上述行为截然不同,出现了合金效应
We prepared a-Si: H films and a-SiB: H films doped with boron by reactive sputtering. The boron concentration (Y_g = [B_2H_6] / ([Ar] ten [H_2]) changes from 10 -6 to 10 -2. The results show that the ESR signal is a superposition of g_1 = 2.0051 and g_2 = 2.0096. The former represents Si dangling bonds Si_3 ~ 0 and the latter is spin signal due to B doping. With the increase of Y_g, g_2 changes from 2.0090 to 2.0096, the width of peak-to-peak width △ H_ (2 ~) broadens from 20.5G to 26.0G, while the value of g_1 and △ H_ (1 ??) show no obvious change. Y_g increases, the density of the two defect states increases, but the density of B caused by the g_1 signal increases rapidly. In the case of heavily doped B (Y_g≥10 ~ (-2)), the properties of the material are quite different from those described above, and the alloy effect