本工作在 0-15kb的流体静压力范围内及 196 K和283-383K的温度下,测量了n-Hg_(1-x)Cd_xTe(0.05≤x≤0.25)电子浓度及电阻率随压力的变化n(p)和ρ(p).由实验值n(p)计算了禁带宽度E_g和费米能级E_f随压力的变化,并同利用化学键的介电理论和虚晶近似计算得到的(dE_g)/dP(x)进行比较.再将上述结果E_g(P)和E_f(P)作为基本变量,考虑极性光学(P.O.)声子散射和带电中心散射,计算了本实验条件下n-Hg_xCdxTe的迁移率和电阻率随压力的相对变化曲线,并同实验结果加以比较. In this work, the changes of the electron concentration and the resistivity of n-Hg_ (1-x) Cd_xTe (0.05≤x≤0.25) with pressure were measured at hydrostatic pressure of 0-15kb and at 196 K and 283-383K n (p) and ρ (p). The change of bandgap E_g and Fermi level E_f with pressure are calculated from the experimental value n (p), which is the same as that calculated by the dielectric theory of the chemical bond and the virtual crystal approximation (P) and E_f (P) as the basic variables, considering the phonon scattering (PO) and charged center scattering (PO), we calculated the n- Hg_xCdxTe mobility and resistivity versus pressure curve and compared with the experimental results.