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一、引言Ⅲ-V族化合物半导体InSb早在60年代便作为一种有用的红外探测材料而被重视,并已制得高性能的3～5μm光伏和光导红外探测器。一般光伏探测器采用在n型基片上扩散P型杂质形成p-n结构。由于扩散容易引起损伤,且扩散层的厚度难以控制,因此工艺较复杂。另一种成结方法是在P型基片上外延生长n~+层,这最早由O.V.Kosogeve等报导,但探测器的情况并未提及,后由宫尾亘等进行了较多的论述并制得台面式n~(+-p)结光伏红外探测器,性能达到(φ2mm灵敏器件)零偏电阻100～200kΩ,D_λ=(5μM,1000,1)=0.5
I. INTRODUCTION III-V compound semiconductors, InSb, have been valued as a useful infrared detection material since the 1960s and have produced high performance 3 to 5 μm photovoltaic and photoconductive infrared detectors. The general photodetector uses a p-n structure to diffuse P-type impurities on an n-type substrate. Since diffusion easily causes damage, and the thickness of the diffusion layer is difficult to control, the process is complicated. Another method is to epitaxially grow n ~ + layers on P-type substrates, which was first reported by OV Kosogeve et al. However, the condition of the detector is not mentioned, and more discussion is given by Miyagawa et al. The tabletop n ~ (+ - p) junction photovoltaic infrared detector has the performance of (φ2mm sensitive device) zero bias resistance 100 ~ 200kΩ, D_λ = (5μM, 1000,1) = 0.5