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在分子束外延生长的调制掺杂N-A1_xGa_(1-x)As/GaAs异质结中,在Al_xG_a_(1-x)As层中常出现载流子未耗尽的薄层,对二维电子气会形成一个并联电导层。本文研究了有并联电导时这种结构在低温强磁场下的输运特性。
In the modulation-doped N-Al_xGa_ (1-x) As / GaAs heterojunction grown by molecular beam epitaxy, the non-depleted thin layers often appear in the Al_xG_a_ (1-x) As layer. Gas will form a parallel conductive layer. In this paper, we study the transport properties of this kind of structure under the condition of low temperature and high magnetic field with parallel conductance.