从理论上对电子辐照在４Ｈ－ＳｉＣ中引入的缺陷数量和各种缺陷能级进行了分析．结果表明，ＥＨ６ 和ＥＨ７ 缺陷能级在４Ｈ－ＳｉＣ中起着有效复合中心的作用．采用ＳＲＨ 模型来估计电子辐照下４Ｈ－ＳｉＣ的少子寿命，并给出了电子辐照下４Ｈ－ＳｉＣ少子寿命损伤系数的模型．结合具体的测量条件，证明了这个模型是合理的．辐照电子对Ｓｉ、ＧａＡｓ 和４Ｈ－ＳｉＣ产生的不同影响展示了在高空、高辐照条件下ＳｉＣ存在着优势 The number of defects induced by electron irradiation in 4H-SiC and various defect levels were theoretically analyzed. The results show that the EH6 and EH7 defect levels play an effective recombination center in 4H-SiC. The SRH model was used to estimate the minority lifetime of 4H-SiC under electron irradiation and the model of lifetime damage of 4H-SiC minority carriers under electron irradiation was given. Combined with the specific measurement conditions, this model is proved to be reasonable. The different effects of irradiated electrons on Si, GaAs, and 4H-SiC demonstrate the superiority of SiC at high altitude and high irradiance