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本文提出了用MOS恒流准静态小信号技术同时测量MOS的准静态电容、高频电容和半导体表面势的新方法。用此方法可以快速、准确地确定Si/SiO_2系统的低界面态密度分布。采用同步限幅差放技术,使界面态密度的测量灵敏度提高了一个量级。
In this paper, a new method for simultaneous measurement of MOS quasi-static capacitance, high frequency capacitance and semiconductor surface potential by using MOS constant current quasi-static small signal technique is proposed. This method can quickly and accurately determine the low interface state density distribution of Si / SiO_2 system. The use of synchronous limiting differential amplifier technology, the interface state density measurement sensitivity increased by one order of magnitude.