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基于考虑载流子弹道输运等非局域传输瞬态效应的流体动力学模型,数值模拟计算了集电区在上面发射区在下面的倒置InP/GaAsSb/InP双异质结双极晶体管(DHBT)器件的直流输出特性和高频性能。计算结果表明:由于集电区台面面积小,集电区在上的倒置InP/GaAsSb/InP双异质结双极晶体管有较高的高频性能;对于发射区在下面与基区接触面积大导致较多的基区载流子复合而使器件的增益偏低问题,可以考虑掩埋侧边腐蚀工艺底切发射区的技术来减少发射区和基区的接触面积,从而减少复合改善器件的增益特性。
Based on the fluid dynamics model which considers the transient effect of non-local transmission such as carrier ballistic transport, the numerical simulation of the collector region in the inverted InP / GaAsSb / InP double heterojunction bipolar transistor DHBT) device DC output characteristics and high-frequency performance. The calculation results show that the InP / GaAsSb / InP double heterojunction bipolar transistor has high frequency performance due to the small area of the collector area, and the contact area between the emitter and the base is large Leading to more base carrier recombination and low gain of the device, the technology of burying the undercut area of the etching process can be considered to reduce the contact area between the emitter area and the base area, so as to reduce the gain of the composite device characteristic.