这里介绍一种砷化钾金属半导体场效应管(GaAs MESFET)振荡器简易的准线性设计方法。将产生功率Pgen表示为FET栅、漏射频电压的函数,在本征场效应晶体管端的电压幅值受到限制的条件下,Pgen有可能达到最大值。由此,得出了用反馈电路元件实现GaAs MESFET振荡器的方法,并用准线性方法设计,采用微波集成电路技术来制作X波段GaAs MESFET振荡器。 Here is a simple, quasi-linear design method for a GaAs MESFET oscillator. The resulting power, Pgen, is expressed as a function of the FET gate, leakage RF voltage and it is possible for Pgen to reach its maximum under conditions where the voltage amplitude at the end of the intrinsic field effect transistor is limited. Thus, a method of realizing GaAs MESFET oscillator by using feedback circuit components is obtained, and the quasi-linear method is adopted to design the X-band GaAs MESFET oscillator by using the microwave integrated circuit technology.