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制做Ⅲ—V族合化物广泛采用了汽相生长方法。大多数生长方法包括两个温度过程:(a)在高温区形成挥发性的化合物,(b)在低温梯度区的衬底上化合物进行沉积。 这篇短文讨论了仅在一个高温区汽相生长GaP的过程。这种方法也适用了像GaAs,GaAs1 -xPx等其他Ⅲ-V族化合物的生长。 图1示出了这种装置和温度分布的简图。与广泛采用的方法不同的是:沉积区的温度与镓源的温度是相同的。镓和磷被分别输运到反应管,直到沉积区之前不进行混合。在沉积区,GaCl与磷反应生成GaP。
Preparation of Ⅲ-V compounds widely used vapor phase growth method. Most growth methods include two temperature processes: (a) formation of a volatile compound in a high temperature zone, and (b) deposition of a compound on a substrate in a low temperature gradient zone. This essay discusses the process of vapor phase growth of GaP at only one high temperature region. This method also applies to other III-V compounds such as GaAs, GaAs1-xPx. Figure 1 shows a diagram of this device and the temperature profile. Unlike widely used methods, the temperature of the deposition zone is the same as the temperature of the gallium source. Gallium and phosphorus were transported to the reaction tube separately, without mixing until the deposition zone. In the deposition zone, GaCl reacts with phosphorus to form GaP.