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On the basis of confirmation of the basic p++|ν|n+- diode structure of Z|element,we start with analyzing the charge transportation theory.According to the action of background and injected carrier in the different operating regions and by solving the basic device equation set by numerical simulation,a conclusion can be drawn that I|V characteristic curve of Z|element shows itself the S|shaped negative resistance and approaches the existing experimental results.And the device performance is rather sensitive to the related technological parameters and material parameters.The achievement in the area of studying Z|element indicates that Z|element is expected to have wide prospects for application in the sensor’s fields,such as the temperature|sensitive,light|sensitive and magnet|sensitive sensors. EEACC:2560; 0290
On the basis of confirmation of the basic p ++ | ν | n + - diode structure of Z | element, we start with analyzing the charge transportation theory. According to the action of background and injected carrier in the different operating regions and by solving the basic device equation set by numerical simulation, a conclusion can be drawn that I | V characteristic curve of Z | element shows itself the S | shaped negative resistance and approaches the existing experimental results. And the device performance is rather sensitive to the related technological parameters and material parameters. The achievement in the area of studying Z | element indicates that Z | element is expected to have wide prospects for application in the sensor’s fields, such as the temperature | sensitive, light | sensitive and magnet | sensitive sensors. EEACC: 2560; 0290