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高浓度浅结是高速砷化镓MESFET的重要技术.我们采用透过氮化硅薄膜进行Si离子注入的方法研制了载流子浓度大于10~(15)cm~(-3)的薄形有源层(<1000A).试验结果表明,氮化硅膜的厚度基本等于载流子浓度峰值位置向衬底表面移动的距离;高剂量(>10~(15)cm~(-2)),低能量,(<80keV)和较厚的氮化硅可以制得符合要求的薄形有源层.
The high concentration of shallow junctions is an important technique for high-speed gallium arsenide MESFETs. We have developed a thin-film having a carrier concentration of more than 10 ~ (15) cm ~ (-3) by Si ion implantation through a silicon nitride film (<1000A). The experimental results show that the thickness of the silicon nitride film is almost equal to the distance from the peak of the carrier concentration to the surface of the substrate; the high dose (> 10 ~ (15) cm -2) Low energy, (<80 keV) and thicker silicon nitride can be made to meet the requirements of the thin active layer.