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本文系统地研究了应变层InGaAs/AlbaAs调制掺杂材料的生长,提出了生长高质量调制掺杂结构的关键措施。应用该材料制作PHEMT器件可得到良好结果。12GHz下噪声系数达到0.68dB,其相关增益大于7dB。
In this paper, we systematically studied the growth of InGaAs / AlbaAs doped doping materials and proposed the key measures for the growth of high quality doping structures. Good results have been obtained with this material for PHEMT devices. At 12GHz, the noise figure reaches 0.68 dB with a gain of more than 7 dB.