Drain相关论文
...
Photographer Li Guochao digs deep in order to understand the history of his native Wuping county.The predominantly Hakka......
Currently,the vertical drain consolidation problem is solved by numerous analytical solutions,such as time-dependent sol......
Although well recognized for tubo-ovarian abscesses, we report, in our best knowledge, the first case of a vaginal drain......
针对日益突出的农业非点源污染问题,区分河套灌区的点源污染与农业非点源污染显得十分必要。考虑灌区点源和农业非点源污染的形成......
This paper presents the consolidation analysis of a foundation (Lianyungang City)with sand drain by vacuum priloading, a......
We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane(F4-TCNQ) and MoO3 for the......
在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2nm厚的N,N-bis(2,2,3,3,4......
利用电解质门控石墨烯场效应晶体管制备了一种高灵敏的葡萄糖传感器.即使不采用纳米修饰的铂金栅电极,这种传感器对葡萄糖的检测极......
Experimental study on aeration characteristics of various aeration devices was conducted in the spillway tunnel of the P......
A vertical carbon nanotube field-effect transistor(CNTFET) based on silicon(Si) substrate has been proposed and simulate......
The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μm is inve......
Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated b
An indium e zinc-oxide(IZO) based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular S......
The dam of Three Gorges Project is a concrete gravity dam with the crest elevation of 185 m,the maximum height of 181 m ......
The n-channel behavior has been occasionally reported in the organic field-effect transistors(OFETs) that usually exhibi......
2014年9月意法半导体最先进的STripFETTMF7系列低压功率MOSFET产品新添三款100 V汽车级产品。STH315N10F7-2、STH315N10F7-6和STP3......
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially,g......
We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resi......
SGS-THOMSON Microelectronics宣布面向一般市场推出其CB45000系列标准单元。它采用0.35微米HCMOS6制程及五层的金属化膜。CB4500......
With the rapid development of expressway in China, the ground improvement is becoming more and more important. The decis......
The enhancement mode GaN metal|insulator|semiconductor field effect transistor (E|MISFET) is successfully fabricated on ......
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigate......
Impactof Device Architecture on Performance and Reliability of Deep Submicron SOI MOSFETs( invited p
The main electrical properties of advanced Silicon On Insulator MOSFETs are addressed. The subthreshold and high field......
提出了一种新结构的低温多晶硅薄膜晶体管 ( poly- Si TFT) .该 poly- Si TFT由一超薄的沟道区和厚的源漏区组成 .超薄沟道区可有......
This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-do......
Quasi-two-dimensional subthreshold current model of deep submicromter SOI drive-in gate controlled h
We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor ......
提出了一种改进的高精度电流型排序电路 .它的结构复杂性仅为 O(N) ,便于扩展 ;动态范围大 ;它是自适应的 ,工作点由输入电流确定 ......
研究了沟长从 0 .5 2 5 μm到 1.0 2 5 μm9nm厚的 P- MOSFETs在关态应力 ( Vgs=0 ,Vds...
使用半导体器件数值分析工具 DESSISE- ISE,对正向栅控二极管 R- G电流表征 NMOSFET沟道 pocket或halo注入区进行了详尽的研究 .数......
用二维模拟软件 ISE研究了典型的 70 nm高 K介质 MOSFETs的短沟性能 .结果表明 ,由于 FIBL 效应 ,随着栅介质介电常数的增大 ,阈值......
提出在 SOI p- MOSFET中采用 Ge Si源 /漏结构 ,以抑制短沟道效应 .研究了在源、漏或源与漏同时采用 Ge Si材料对阈值电压漂移、漏......
A new visa policy provides more opportunities for both Chinese and U.S.citizens Starting November 12,the concluding day ......
FORWARD GATED-DIODE METHOD FOR EXTRACTING HOT-CARRIER-STRESS-INDUCED BACK INTERFACE TRAPS IN SOI/NMO
The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NM......
The hot-carrier-induced oxide regions in the front and back interfaces are systemati-cally studied for partially deplet......
The authors analyzed the engineering geological characteristics of the slope of the study area (K75+840-K76+340). Two ty......
Forward gated-diode Recombination-Generation(R-G) current method is appliedto an NMOSFET/SOI to measure the stress-indu......
在最大衬底电流条件下 (Vg=Vd/ 2 ) ,研究了不同氧化层厚度的表面沟道 n- MOSFETs在热载流子应力下的退化 .结果表明 ,Hu的寿命预......
采用标准双栅 CMOS工艺在镍诱导非晶硅横向晶化形成的多晶硅上制造了高性能的薄膜晶体管 ,并详细研究了器件制备前高温预处理对薄......
研究了一种采用非对称结构和注 Ge的部分耗尽 0 .8μm SOI n MOSFET的浮体效应 ,实验结果表明这种结构能够提高漏端击穿电压约 1V,......
器件稳健性设计本质上是一个多个目标的优化问题 .将实验设计和响应表面方法相结合可用来满足减少所需的 TCAD模拟次数的强烈需求 ......
报道了采用电子束光刻、反应离子刻蚀及热氧化等工艺 ,在 p型 SIMOX(separation by implanted oxygen)硅片上成功制造的一种单电子......
描述了一种用综合性方法设计的亚 5 0 nm自对准双栅 MOSFET,该结构能够在改进的主流 CMOS技术上实现 .在这种方法下 ,由于各种因素......
Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is considered as the most promising candidate used in dee......
A new LDMOST structure, named B-LDMOST that has a buried layer under thedrain is proposed. The buried layer is not conn......
An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current Ieve......
讨论了最差应力模式下 (Vg=Vd/ 2 )宽沟和窄沟器件的退化特性 .随着器件沟道宽度降低可以观察到宽度增强的器件退化 .不同沟道宽度......
