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本文描述了与(100)—InP衬底晶格匹配的In_(0.53)Ga_(0.47)As的气相外延生长,并给出了由这种材料制作的光电二极管的特性。确定了使用氢化物法,在不同的Ga—HCl流量下进行晶格匹配生长所需要的气体流量条件。研究了在650—750℃的温度范围内,衬底温度对进行晶格匹配生长所必需的气体流量比的影响。实验发现,在该温度范围内,生长速率从大约8μm/小时变化到约60μm/小时。测得表面反应的激活能为44千卡/克分子。用InP/In_(0.53)Ga_(0.47)As/InP结构制作的光电二极管表明,在1.22μm波长下,上升和下降时间≤1毫微秒,量子效率超过95％。
This paper describes the vapor-phase epitaxial growth of In_ (0.53) Ga_ (0.47) As lattice-matched to the (100) -InP substrate and gives the characteristics of the photodiode fabricated from this material. The gas flow conditions required for lattice-matched growth using the hydride method at different Ga-HCl flow rates were determined. The effect of substrate temperature on the gas flow ratio necessary for lattice-matched growth was investigated in the 650-750 ° C temperature range. It was experimentally found that in this temperature range, the growth rate varied from about 8 μm / hour to about 60 μm / hour. The activation energy of the surface reaction was measured at 44 kcal / mol. Photodiodes fabricated with an InP / In_ (0.53) Ga_ (0.47) As / InP structure show rise and fall times of ≤1 nanosecond at a wavelength of 1.22 μm and a quantum efficiency of over 95%.