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在高纯半绝缘(HPSI)衬底上外延生长了SiC材料,自主开发了SiC MESFET器件制作工艺,实现了单胞栅宽27 mm芯片的制作。优化了芯片装配形式,通过在管壳内外引入匹配网络提升了芯片输入阻抗及输出阻抗。利用管壳外电路匹配技术,采用管壳内匹配及外电路匹配相结合的方法对器件阻抗进行了进一步提升。优化了管壳材料结构,采用无氧铜材料提高了管壳散热能力。采用水冷工作的方式解决了大功率器件散热问题,降低了器件结温,可靠性得到提高。采用多胞芯片匹配合成技术,实现四胞4×27 mm芯片大功率合成。四胞芯片封装器件在连续波工作频率为2 GHz、Vds为37.5 V时连续波输出功率达80.2 W(49.05 dBm),增益为7.0 dB,效率为32.5%。
SiC material was epitaxially grown on high purity semi-insulating (HPSI) substrate and self-developed SiC MESFET device was fabricated. Optimized the form of chip assembly, through the introduction of a matching network inside and outside the shell to enhance the chip input impedance and output impedance. The impedance of the device is further improved by using the matching technology of the outside of the tube and the tube and the matching of the outside and the matching of the external circuit. Optimized the shell material structure, the use of oxygen-free copper material to improve the shell heat capacity. Water-cooled work to solve the high-power devices cooling problem, reducing the junction temperature, reliability has been improved. Multi-cell chip matching synthesis technology to achieve quad-cell 4 × 27 mm chip high-power synthesis. The quadruple-chip device delivers continuous power of 80.2 W (49.05 dBm) at a continuous frequency of 2 GHz and a Vds of 37.5 V, with a gain of 7.0 dB and an efficiency of 32.5%.