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为了解决3DK 4的大电流特性及提高击穿和降低饱和压降,上海元件五厂二车间、四车间的工人、技术人员和复旦大学的师生试用二层杂质分布的外延片。较好地解决BVceo和大电流特性h_(FE)之间的矛盾,取得了一些进展。即提高了3DK4的大电流性能又保持了一定高的击穿电压,其结构如图1所示。此管的BC结是做在高阻层和中阻层的交界处,当BC结加反向偏压后,高阻层势垒扩展快(如图虚线),中阻层慢,使棱角电场减弱能提高击穿电压,集电区处在中阻层,杂质浓度较高。对提高大电流性能,避免有效基区的扩展起到了良好的作用,采用了此结构后的3DK4提高了优品率。
In order to solve the large current characteristic of 3DK 4 and improve the breakdown and saturation voltage drop, the second-floor impurities-distributed epitaxial wafers of workers, technicians and teachers and students from Shanghai Fastener Two Factory and four workshops were tested. It has made some progress to solve the contradiction between BVceo and high current characteristic h_ (FE). That is to say, the high-current performance of 3DK4 is improved, and a certain high breakdown voltage is maintained. Its structure is shown in FIG. 1. The BC junction of the tube is made at the junction of the high resistance layer and the middle resistance layer. When BC junction plus reverse bias voltage, the barrier of high resistance layer expands fast (as dotted line in the figure), the middle resistance layer is slow, Weakening can improve the breakdown voltage, the collector is in the resistance layer, a higher concentration of impurities. To improve the high-current performance, to avoid the expansion of the effective base has played a good role, the use of this structure after 3DK4 improve the excellent rate.