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介绍了一种称为COMFET的新器件。该器件具有成为未来十年控制中等功率的“最终”器件的全部特征。COMFET通过一种称为“电导率调制”的机理克服了标准MOSFET的导通电阻限制这一基本问题,并使器件的电导损耗降低了十分之九。而且,COMFET在-40～+150℃温区敏感的开态电压降较小。研制了n沟和p沟COMFET,两者的开态电压降相同。功率COMFET的研制有了新的进展,开关时间已降到100毫秒的值。
A new device called COMFET is introduced. The device has all the features to be the “final” device for controlling medium power over the next decade. The COMFET overcomes the basic problem of the on-resistance limits of standard MOSFETs by a mechanism called “conductivity modulation” and reduces the device’s conductance losses by nine-tenths. Moreover, the COMFET is sensitive to a small on-state voltage drop in the temperature range of -40 to + 150 ° C. Developed n-channel and p-channel COMFET, the two open-state voltage drop the same. New advances have been made in the development of power COMFETs, with switching times down to 100 milliseconds.