RRAM相关论文
存储器是当今集成电路产业中的核心部分,随着半导体行业的迅速发展,人们对存储器的要求也越来越高。传统的闪存类存储器由于尺寸过......
近年来,人工智能飞速发展并在许多领域得到了应用。然而神经网络庞大的数据量对硬件的密集型数据处理能力是一个新的挑战。传统的......
目前,基于各种神经网络算法的智能设备应用渗透到各行各业,这需要巨大的计算量与存储量作为支撑,而提供神经网络边缘计算的硬件平......
Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy ba
Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles (TaN-NPs)and sandwiched betwee......
Application of ion-in-conjugation molecules in resistive memories and gas sensors:The role of conjug
Ion-in-conjugation (IIC) materials are emerging as an important class of organic electronic materials with wide applicat......
Resistance Switching Properties of Ag/ZnMn2O4/p-Si Fabricated by Magnetron Sputtering for Resistance
A resistance random access memory (RRAM) with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering meth......
在过去的几十年中,氮化硼（BN）由于其卓越的特性和新颖的晶体结构在多个领域有着广泛的应用。这些应用包括绝缘润滑剂、气体存储材料......
Characteristics and Mechanism of Multimode Resistive Switching Behaviors in the Oxide-electrolyte-ba
Resistive switching (RS) phenomenon induced by redox in oxide electrolyte shows fascinating prospects for potential appl......
信息技术的飞速发展导致了对于快速的信息存储和处理，以及高密度、低能耗设备的迫切需要。电阻切换随机存取存储器(RRAM)作为一个典......
Recently 2D material graphene with carbon atoms packed into a plane honeycomb crystal structure becomes research hotspot......
随着信息技术的发展，人们对存储器的需求越来越高，而传统的flash存储器面临着物理极限，其性能很难再进一步提高，因此研究下一代非易失......
As one of the most promising candidates for next generation data storage applications,resistive random access memory (RR......
Array-level boosting method with spatial extended allocation to improve the accuracy of memristor ba
Memristor based computing-in-memory chips have shown the potentials to accelerate deep neural networks with high energy ......
The non-Markov process exists widely in thermodymanic process,while it usually requires the packing of many transistors ......
Low energy dissipation makes resistive random access memory(RRAM)a very interesting non-volatile storage media for w......
非易失存储器是集成电路最重要的技术之一,广泛应用于信息、航空/航天、军事/国防、新能源和科学研究的各个领域,有着巨大的市场。......
采用基于密度泛函理论的第一性原理对阻变随机存取存储器(RRAM)器件的阻变物理机制进行了分析研究。对比计算了氧空位缺陷或掺杂(A......
Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improv
In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybr......
在阻变存储器(Resistive Random Access Memory,RRAM)众多功能层薄膜材料中,高k的HfOx薄膜因其在耐久性(Endurance),保持性(Retent......
和Flash存储器相比,RRAM(阻变存储器)作为一种新型非挥发性存储器具有运行速度快,耐久度高,工作电压低且易于集成等特点,被认为极......
Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromo
In this work,by incorporating different electrodes (Ta/Ti) onto TaOx dielectric layer,we studied both the conductance re......
Resistive random-access memory(RRAM),also known as memristors,having a very simple device structure with two terminals,f......
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,Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R
The impact of the variations of threshold voltage (Vth) and hold voltage (Vhold) of threshold switching (TS) selector in......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
The physical mechanism of the resistance switching for RRAM with co-doped defects(Ag and oxygen vacancy)is studied based......
通过构造AlO_x/WO_y双层结构实现了阻变存储器的均匀性、低功耗等特性,该器件阻变层中的AlO_x为氧空位渐变的梯度膜,从而使得形成......
基于HfO2材料制作了一种具有良好非易失性的阻变存储器(RRAM).根据ECM导电细丝机制,建立了动态的Verilog-A模型,该模型包含了RRAM......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
The resistive random access memory(RRAM) device has been widely studied due to its excellent memory characteristics and ......
本文采用SMIC0．18μmCMOS工艺，设计了一种基于阻变随机存储器（RRAM）的加法器电路．区别于传统的蕴含逻辑（IMP）型加法器，本设计选取新型的多......
设计并实现了一颗适用于射频识别（RFID）标签的低功耗嵌入式64-kbit阻变存储器芯片。提出了新型的带尖峰电流控制功能的高压稳压电路,......
阻变存储器（RRAM）是一种前景非常好的未来通用存储技术,也是当前国际学术界和工业界研究的热点。主要介绍了存储器外围电路的电路设......
在新型非易失性存储领域,结构简单、高速低耗的阻变存储器具有巨大优势和很强的竞争力.简要介绍了阻变存储器的结构及其两个电阻转......
采用HHNEC0．18p．m标准CMOS工艺设计实现了多个1kb容量的阻变存储器电路。针对WO。阻变材料的操作特点，提出了可切换的写电路以及自调......
采用溅射法制备的非晶结构HfO_x薄膜,其平均透射率超过80%,禁带宽度约为5.73 eV。以此制备的ITO/HfO_x/Ti阻变存储器,表现出稳定且......
Resistive random-access memory(RRAM),also known as memristors,having a very simple device structure with two terminals,f......
阻变存储器（resistive random access memory,RRAM）作为未来一种高性能的非挥发性存储器,具有面积小、操作电压低、兼容性好等特点.......
介绍了双口RAM在多CPU数据采集处理系统中的应用。提出了基于双端RAM的数据采集通信单元在配电馈线自动化领域中的应用，并利用详实......
【摘要】在各种新型非易失性存储器中，阻变存储器RRAM具有存储单元结构简单、工作速度快、功耗低、有利于提高集成密度等诸多优点，具......
提出一种适用于未来高密度应用的三维多层可堆叠1TxR阻变存储器设计.采用新型的多个存储电阻共享一个选通管的存储单元,选通管制作......
半导体存储器是市场份额最大的单一集成电路产品,广泛应用于信息、航空/航天、军事/国防、新能源和科学研究等领域,有着巨大的市场......
笔者设计了一种基于存储器的高精度抗干扰比较器，其中主要包括放大器、输入级MOS管的尺寸调整模块等模块。通过对放大器灵敏度的调......
