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用液相外延生长了不同x值0.2-0.8的P型和N型AlxGa_(1-x)As.用X光能谱法测量了厚度10μm范围内的Al组分分布.发现在厚度为5μm以内Al组分基本上是均匀的,而在5μm以外随着厚度的增加对于高Al样品x值是增高的,而对于较低Al组分样品x值降低.用EBIC方法测量了电子和空穴的扩散长度.得到在掺杂杂质浓度相同的条件下电子的扩散长度随Al组分x值的增加而减小.空穴的扩散长度则不随Al组分的变化而变化.
P-type and N-type AlxGa1-xAs with different x values of 0.2-0.8 were grown by liquid phase epitaxy.The distribution of Al composition in the thickness of 10μm was measured by X-ray spectroscopy and found to be within 5μm The Al composition is substantially uniform and increases with increasing thickness as the x value increases for high Al samples and decreases for the lower Al components as the thickness increases beyond 5. The EBIC method is used to measure the electron and hole Diffusion length.The diffusion length of electrons decreases with the increase of x value of Al composition at the same doping impurity concentration.The hole diffusion length does not change with Al composition change.