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等离子化学传输淀积[PCTD]法是我们设计的一种用来制备非晶态硅合金膜的新法。利用从气体源产生的等离子体中的活性元素,在腐蚀区腐蚀多晶硅或多晶硅加掺杂料。腐蚀后的产物由于气流和电场的作用,传输到淀积区与衬底表面起反应淀积出非品硅合金膜。用此法也能淀积出非晶态砷化镓薄膜。
Plasma chemical transport deposition [PCTD] method is a new method we designed to prepare amorphous silicon alloy film. Utilizing the active elements in the plasma generated from the gas source, the polysilicon or polysilicon plus dopant is etched in the etch region. The corroded product is transported to the deposition area to react with the surface of the substrate to deposit a non-product silicon alloy film due to the airflow and the electric field. This method can also be deposited amorphous gallium arsenide film.