SELF-ALIGNED相关论文
N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the......
Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate diel
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned proc
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
利用选择外延技术研制了1.5μm DFB激光器和自对准模斑转换器单片集成器件.激光器的上限制层与垂直方向上楔型波导的模斑转换器同......
为了改善高压功率SiGe HBT的综合性能,应用图形外延SiGe工艺,研制出了一种新型的双多晶自对准SiGe HBT器件.相对于双台面结构的SiG......
通过采用发射极一基极金属自对准、发射极镇流电阻，电镀空气桥等工艺改善了器件的高频特性，提高了器件热稳定性与功率特性。当器件工......
在对离子敏场效应晶体管(ISFET)基本结构及电学特性分析的基础上,提出了一种基于CMOS技术实现ISFET与信号处理电路集成化的设计方......
Scalable fabrication of geometry-tunable self-aligned superlattice photonic crystals for spectrum-pr
Superlattice photonic crystals (SPhCs) possess considerablepotentials as building blocks for constructing high-performan......
Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for i......
采用SIVALCO软件对槽栅与平面器件进行了仿真对比分析，结果表明槽栅器件能够有效地抑制短沟道及热载流子效应，而拐角效应是槽栅器件......
报道了发射极自对准的InP基异质结双极型晶体管．在集电极电流Ic=34．2mA的条件下，发射极面积为0.8μm×12μm的InPHBT截止频率fT为......
本文用俄歇能谱、卢瑟福背散射、电流-电压和电容-电压等方法研究了射频磁控反应溅射制备的WN_x/n-GaAs肖特基势垒特性。结果表明,......
异质结双极型晶体管（HBT）是MMIC领域中最具有竞争力的三端器件之一．本文提出了一种三指发射极HBT的设计．通过与同一版上两指发射极HBT......
总结了在φ５０ｍｍ ＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入，自对准亚微米难熔栅制备，钝化介质膜生长，干法刻蚀......
叙述了一种制作双极型晶体管的T形电极结构自对准工艺。利用该工艺已研制成微波T形电极晶体管(TSET)。最高振荡频率为10GHz,截止频......
5 nm logic process is the current leading-edge technology which is under development in world-wide leading foundries.In ......
With the introduction of EUV lithography,the photolithographic process in 5 nm logic process can be simplified to use mo......
