Transistor相关论文
本文简要地介绍了有机半导体中载流子迁移率的几种模型,着重阐述了测量有机半导体中载流子迁移率的各种方法的测试原理。主要有如......
报道了一种用于卫星通讯系统,基于0·5μm栅长增强型赝配高电子迁移率晶体管的两级级联微波单片低噪声放大器.采用集总参数元件来......
A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temper......
An optimum design of a low noise amplifier (LNA) in S-band working at 2-4 GHz is described. Choosing FHC40LG high electr......
A new planar split dual gate (PSDG) MOSFET device, its characteristics and ex-perimental results, as well as the three d......
To implement a fully-integrated on-chip CMOS power amplifier(PA) for RFID readers,the resonant frequency of each matchin......
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si......
The modeling of switching loss in semiconductor power devices is important in practice for the prediction and evaluation......
A complementary metal oxide semiconductor (CMOS) voltage controlled ring oscillator for ultra high frequency (UHF) radio......
The large signal RF power transmission characteristics of an advanced InGaP HBT in an RF power amplifier are investigate......
A 4 W K-band AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT) monolithic microwave integrated c......
An addition is a fundamental arithmetic operation which is used extensively in many very large-scale integration (VLSI) ......
An ultra-low power complementary metal-oxide-semiconductor(CMOS) front-end readout ASIC was developed for a portable dig......
By using 0.15 μm GaAs pHEMT (pseudomorphic high electron mobility transistor) technology,a design of millimeter wave po......
A novel structure of a VDMOS in reducing on-resistance is proposed.With this structure,the specific on-resistance value ......
In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event tr......
A low noise distributed amplifier consisting of 9 gain cells is presented.The chip is fabricated with 0.15-μm GaAs pseu......
A design of high dynamic range linear radio frequency power detector(PD),aimed for transmitter carrier leakage suppressi......
A new bandgap reference(BGR) curvature compensation technology is proposed,which is a kind of multiple transistor combin......
Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions
The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching(UI......
The RC-IGBT(reverse conducting insulated gate bipolar transistor) is a new kind of power semiconductor device which has ......
Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent d......
NBTI-induced transistor aging has become a prominent factor affecting the reliability of circuits. Reducing leakage cons......
A novel fully differential high speed high resolution low offset CMOS dynamic comparator has been implemented in the SMI......
A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to im......
A new 22-element small signal equivalent circuit model for the AlGaN/G N high electron mobility transistor(HEMT) is pres......
A promising technology named epitaxy on nano-scale freestanding fin(ENFF) is firstly proposed for heteroepitaxy This tec......
Different switching frequencies are required when SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)are swi......
For 3D vertical N AND flash memory,the charge pump output load is much larger than that of the planar NAND.resulting in ......
ZnO作为活性层制作薄膜晶体管(thin film transistor,简称TFT),因性能改进显著而成为新兴的研究热点.就TFT发展历史、器件典型结构......
Atomically thin MoS_2 films have attracted significant attention due to excellent electrical and optical properties.The ......
This paper presents a 4×2 switching matrix implemented in the Win 0.5 m Ga As pseudomorphic high electron mobility tran......
Research on a hybrid system of a crane is a focus which considers environmental protection and energy saving.A new envir......
Due to the ultra-thin nature and moderate carrier mobility,semiconducting two-dimensional(2D)materials have attracted ex......
In this work,we investigate the influence of defect concentration of the diamond substrates on the performance of hydrog......
本文提出一种新的用于 CMOS图像传感器像素的光电检测器——双极结型光栅晶体管。由于引入 p+ n注入结 ,光电荷的读出速率大大增加......
Organic light-emitting transistors (OLETs) integrate the functions of light-emitting diodes and field-effect transistors......
An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID appli- cations was implemen......
以基于CNT的微纳电子器件为基础,综述了近年来改善CNT与金属电极间电接触性能的研究进展,阐述了各种改善CNT与金属电极间电接触性......
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7......
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7......
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7......
Significant enhancement of photoresponsive characteristics and mobility of MoS2-based transistors th
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7......
安全工作区(SOA)是MOSFET器件设计中的一个关键参数。传统CMOS在衬底电流-栅极电压曲线上只出现一个衬底电流峰值,该峰值可直接反......
在医学电子学课程教学中,三极管放大电路是重点和难点,但现有大多数教材在相关内容的呈现上存在不足,再加上医学生工科知识比较欠......
Discussion on the relationship between ΔVEB and IE presented in thermal resistance standard IEC60747
This paper points out an error in the principle figure and the waveform figure of the thermal resistance standard IEC747......
The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithogra......
讲述TO-257金属扁平封装3CD104型PNP大功率晶体管的研制过程.根据产品技术要求,进行产品结构及工艺流程设计,通过合理地减少发射区......
